Electroluminescence from nanocrystals above 2 µm

Visible nanocrystal-based light-emitting diodes (LEDs) are about to become commercially available. However, their infrared counterparts suffer from two key limitations. First, III–V semiconductor technologies strong competitors. Second, potential for operation beyond 1.7 µm remains unexplored. The range 1.5 4 corresponds a technological gap in which the efficiency of interband quantum-well-based devices vanishes and quantum cascade lasers not efficient enough. Powerful LEDs this needed applications such as active imaging, organic molecule sensing airfield lighting. Here we report design HgTe LED with luminescence between 2 2.3 µm. With an external 0.3% radiance up 3 W Sr?1 m?2, these already present competitive performance emission above Near-infrared at around is observed nanocrystals. based on material platform could prove be useful low-cost, convenient light source gas other tasks.